BELEAD SENSOR
北立传感器技术(武汉)有限公司
1024 InGaAs Linear Array Detector
BLM197A213-C,1024×2,12.5μm×12.5μm
User Manual

BeLead Sensor Technology (Wuhan)Co.,Ltd. Add: Bldg.20-3,Zhongnan High-Tech
Innovation Center,NO.20 Chuanggu Road, Dongxihu Dist.,Wuhan 430040,CHINA
Tel: 027-83389893
Email: info@BeLeadSensor.com
This user manualwas revised in October2024 andmaybe
updatedsubsequently productoptimization
1. Introduction
The BLM197A213-C InGaAs linear array detector is mainly composed of a 1024×2 scale InGaAs
photosensitive chip, a readout circuit (ROIC) and a first-stage thermoelectric cooler (TEC
The BLM197A213-C InGaAs linear array detector is mainly composed of a 1024×2 scale InGaAs
photosensitive chip, a readout circuit (ROIC) and a first-stage thermoelectric cooler (TEC), and
adopts metal package. It has the characteristics of high line frequency and multi-level gain, and
can be used in spectral analysis, color sorting, medical and other applications.
can be used in spectral analysis, color sorting, medical and other applications.The BLM197A213-C InGaAs linear array detector is mainly composed of a 1024×2 scale InGaAs2. Parameters
2.1 Photoelectric performance
Index | Typical Value | |
Response spectrum range (μm)*1 | 0.95 ±0.05~1.65 ±0.05 | |
Pixel fill rate(%) | 100 | |
Peak quantum efficiency(%) | ≥65 | |
Peak Detection rate (cm, √Hz/ w | ≥1× 1012 | |
Peak sensitivity (A/W) | ≥0.8 | |
Effective pixel rate(%)*2 | ≥99 | |
Response non-uniformity(%) | <3 | |
Readout method | IWR / ITR | |
Readout rate (MHz) | 1~11 | |
Max . frame rate(fps) | 40k | |
Gain range | 4 | |
Saturation voltage(V) | 2.0 | |
Integral capacitor(fF) | Gain range 1 :10 Gain range 3 :100 | Gain range 2 :20 Gain range 4 :500 |
*1 Focal plane temperature=25℃
*2 The percentage of pixels near the half-well whose pixel response signal deviates from the average value less than a certain range.
2.2 Mechanical Performance
Index | Typical Value |
Length × Width × Height(mm) | 51.3 ×28.2 ×9.8 |
Weight(g) | ~38 |
Focal plane scale | 1024 ×2 |
Pixel center distance (μm) | 12.5 |
Pixel size (μm2) | 12.5 × 12.5 |
Photosensitive area (mm) | 12.8 ×0.025 |
2.3 Operating Environment and Power Consumption Parameters
Index | Typical Value |
Working temperature (℃ ) | -20~+60 |
Storage temperature (℃ ) | -40~+70 |
Typical power (W)*1 | ≤0.5 |
*1 When TEC is not been turned on, ambient environment =25℃ , Clock frequency =1MHz , VDDD=VDDA=3.3V, VBOP=2.4V, VBOUT=VREF=VNDET=2.4V
3. Mechanical Parameters
This detector adopts metal packaging and is filled with high-purity nitrogen at normal pressure. The
metal housing is made of FeNiCoSi alloy with Ni layer electroplated on the surface. The window is
fixed by gluing and the cover is sealed by resistance welding. The dimension of the detector is
51.3mm (L)×28.2mm (W)×9.8mm (H). There are 38 pins leading out from the bottom, of which 36
Φ0.45mm pins are arranged in a double-sided "I" shape with a pin spacing of 2.00mm. They are
used for the input of focal plane power and commands, the electrical lead-out of focal plane
detection signals and temperature sensors; 2 Φ1.00mm pins are used for the connection of
thermoelectric coolers. There are 4 Φ2.5mm through holes on both sides of the tube shell for fixing
the detector, and the pin close to the notch is number 1.
The appearance and dimensions of the mechanical interface are shown in the figure below:
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4.Optical Parameters
4.1 Optical Structure
This detector uses a 1024×2 element InGaAs focal plane with 4 redundant elements on each end, that is,the total number of pixels is 1032×2.In actual use,it is recommended to use the 5th to 1028th columns.The pixel shape is square,the photosensitive size is 12.5μm×12.5μm,the structure is arranged in an "I"shape,two rows of pixels are arranged alternately,and the center distance of each row of pixels is 12.5μm.The structure is shown in the figure below:
The design distance between the detector's photosensitive surface and the detector's upper surface is 3.80±0.15mm,the design distance between the detector's lower surface and the window
is 1.60±0.20mm,and the design distance between the detector's lower surface and the aperture is 0.70±0.15mm.The window material is sapphire with a thickness of 1.80±0.05mm and an AR coating on the surface.The transmittance in the response band is >95%.The window light- transmitting area is 22.80mm ×5.80mm,and the aperture light-transmitting size is 13.30mm×0.60mm.The center of the photosensitive surface is located at the center of the detector,the relative position offset is ≤0.05mm,and the relative rotation displacement is ≤0.02mm.
5.Electrical Features
5.1 Detector Pin Diagram
5.2 Instruction of Detector Pin Diagram
NO. Name Input/Output Function Reference value | ||||
1 | VDDA | Input | Analog circuit power supply,provides voltage for the analog circuit in the detector | Analog voltage 3.3V |
2 | SH3 | Input | Sampling control signal,setting pixel integration time,changing readout mode, see the timing section for specific methods |
Digital voltage High 3.3V/Low OV |
3 | SH2 | Input | ||
4 | SH1 | Input | ||
5 |
RESET |
Input | Reset signal,controls the length of the circuit acquisition cycle.For control methods,see the timing section | Digital voltage High 3.3V/LowoV |
NO. | Name | Input/ Output | Function | Reference Value |
6 | VOUT5S | Output |
R is the reference signal, S is the output signal. The actual detector response signal value is obtained by subtracting the output signal from the reference signal of the same channel. |
0.35~2.45V |
7 | VOUT5R | Output | ||
8 | VOUT6S | Output | ||
9 10 | VOUT6R VOUT7S | Output Output | ||
11 | VOUT7R | Output | ||
12 | VOUT8S | Output | ||
13 | VOUT8R | Output | ||
14 | VBOUT | Input | Buffer bias, provides bias voltage for circuit buffer | Analog voltage 2.4V |
15 | VBOP | Input | Amplifier bias, provides bias voltage for signal amplifier | Analog voltage 2.4V |
16 | VREF | Input | Reference voltage, providing a reference value for the output signal | Analog voltage 2.4V |
17/ 18 | TS | - | Temperature Sensor | - |
19 | GND | Input | Ground wire | - |
20 | VNDET | Input | Chip public N | Analog voltage 2.4V |
21 | VBUF | Input | Buffer bias, providing bias voltage for the circuit's total buffer | Analog voltage 2.4V |
22 | VOUT4R | Output |
See No. 6 ~ No. 13 |
0.35~2.45V |
23 | VOUT4S | Output | ||
24 | VOUT3R | Output | ||
25 | VOUT3S | Output | ||
26 | VOUT2R | Output | ||
27 | CASE | - | - | - |
28 | VOUT2S | Output |
See No. 6 ~ No. 13 |
0.35~2.45V |
29 | VOUT1R | Output | ||
30 | VOUT1S | Output | ||
31 |
DSELUNIT | Input | Trigger pulse, a sign that the circuit starts collecting signals | Digital Voltage High 3.3V/ Low 0V |
32 |
DSELBUF | Input | Trigger pulse | Digital Voltage High 3.3V/ Low 0V |
No. | Name | Input/Out put | Function | Reference value |
33 |
CLK | Input | Clock,providing a time reference for circuit drive timing | Digital voltage High 3.3V/Low OV |
34 | SELCAP0 | Input | Detector gain selection,controlling the detector output signal size,for specific methods seeing the timing section | Digital voltage High 3.3V/Low OV |
35 | SELCAP1 | Input | ||
36 |
VDDD | Input | Digital circuit power supply,providing voltage for the digital circuit in the detector | Analogue voltage 3.3V |
37 38 | TEC(-)TEC (+) |
Input Input | Thermoelectric cooler input voltage,TEC(+) pin is connected to high level for cooling, and low level for heating |
- |
Precautions:
The DC input directly affects the overall noise of the detector,so the ripple noise of the DC input power supply has the following requirements:
1)VDDA<2mV
2)VDDD<10mV
3)VREF/VNDET<0.3mV
4)VBOP/VBUF/VBOUT<1mV
5.3 Detector Working Principle and Connection Diagram
Short-wave Infrared Signal Reception and Photoelectric Conversion
4 Detector Timing Description (IWR Mode)
The overall readout circuit driving timing pulse is shown in the following figure:
96ms
CLK 几
RESET
SH1
SH2
SH3
4-192m
DSELBUF
DSELUNIT
VOUT
The overall timing requirements are as follows:
Name | High level width | Initial level | Rising edge time |
CLK | 0.5 clock cycle | Low | 3.0μs |
RESET | Adjust according to the integration time | High | 1.5μs |
SH1 | 1μs | Low | 2.5μs |
SH2 | 1μs | Low | 22.5μs |
SH3 | 3μs | Low | 24.0μs |
DSELBUF | 192ns | Low | 27.0μs |
DSELUNIT | 96ns | Low | 27.1μs |
Precaution:
1.The CLK cycle and RESET high level width can be set according to requirements.The recommended CLK frequency range is 1-11 MHz,and the RESET low level width cannot be less than 2μs.
2.In IWR mode,the relative positions of SH1,SH2,and SH3 cannot be changed,and the specific integration time of the detector is the time from the falling edge of SH1 to the falling edge of SH2 in the same RESET cycle.
3.The DSELBUF high level needs to cover a complete CLK high level,and the rising edge needs to be within the CLK low level.It is recommended to set the rising edge at 1/2 of the CLK low level.
4. The actual signal starts to be read out at the first CLK rising edge after the rising edge of DSELUNIT, and the reference signal R and the output signal S are read out in sequence until reaching the last CLK cycle before the rising edge of SH3.
5. If the RESET high level width is not enough to read out all 1032 pixels, when the next RESET high level comes, the reading will still start from the first pixel, not from the pixels that have not been read. If the RESET high level width is too large, after reading all 1032 pixels of the channel, it will continue to be empty until the RESET low level comes to reset.
6. It is recommended to use digital input voltage for SH1, SH2 and SH3, that is, to keep 3.3V high level/ 0 V low level consistently.
7. Anti-static measures should be taken during the delivery and use of the detector.
8. The power supply status must be checked during the use of the detector, and short circuit of the signal output terminal is strictly prohibited.
9. There are 2 rows of photosensitive elements, and each row has 4 channels that are read out synchronously. Each channel has two output levels: VOUTR (reference level) and VOUTS (signal level). Taking one row as an example, the output data of the 4 channels are as follows:
Channel | Group No.1 | Group No.2 | Group No.3 | Group No.4 |
…… | Group No.255 | Group No.256 | Group No.257 | Group No.258 |
VOUT1 R/S | A1 | A2 | A3 | A4 |
…… | A255 | A256 | A257 | A258 |
VOUT2 R/S | B259 | B260 | B261 | B262 | B514 | B515 | B517 | B516 | |
VOUT3 R/S | C517 | C518 | C519 | C520 | C769 | C770 | C771 | C774 | |
VOUT4 R/S | D775 | D776 | D777 | D778 | D1029 | D1030 | D1031 | D1032 |
The 258 sets of data output by 4 channels in each row can be spliced into 1032 sets of data. The splicing method is as follows:
A1 | … | A258 | B259 | … | B516 | C517 | … | C774 | D775 | … | D1032 |
The signal data in 1032×2 format is collected,the middle area is 1024×2 which is the effective pixel area,and the rest of the area is the redundant pixel area.
Row | Column1~4 | Column 5~1028 | Column 1029~1032 |
Row 1 | Redundant Area | Effective imaging area | Redundant Area |
Row 2 | Redundant Area | Effective imaging area | Redundant Area |
This detector has 4 gain levels.It is recommended to use the highest gain level (level 1).The specific relationship between the gain level and input voltage is shown in the following table:
Level | SELCAP0 | SELCAP1 | Gain |
1 | 0 | 0 | High
Low |
2 | 1 | 0 | |
3 | 0 | 1 | |
4 | 1 | 1 |
5.5 Detector Peripheral Recommended Circuit Diagram
3.3V
10uF
GND 3.3V
10uF
GND 2.4V
100Ω
10uF
GND 2.4V
10uF
GND
0.1uF
0.1uF
0.1uF
0.1uF
VDDA
GND
VDDD
GND
VREF
VNDET
GND
VBOUT
VBOP VBUF
GND
CLK
RESET
SHI
SH2
SH3
DSELUNIT
DSELBUF
SELCAP0
SELCAP1
VOUTR
VOUTS
FPGA
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6.Thermal Parameters
6.1 Thermoelectric Cooler Features
The detector integrates a first-stage thermoelectric cooler (TEC).The center of the heat dissipation surface is the center of the lower surface of the detector.
The heat dissipation area should be ≥20mm×20mm.
Its performance parameters are shown in the following table:
Parameters | Values |
Max.allowable load current(ITEC-max/A) | 8.5 |
Max.allowable load voltage(VTEC-max/V) | 4.3 |
AC impedance (including AC resistance)(ACR/Ω) | 0.33-0.35 |
6.2 Features of Temperature Monitoring Module
This detector uses a thermistor as a temperature sensor.The relationship between the resistance
and temperature within the operating temperature range is shown in the following chart:
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1 10 Thermistor resistance(kΩ)
The typical relationship between thermistor resistance and temperature is shown in the following
table:
Temperature(℃) | Resistance (kΩ) | Temperature(℃) | Resistance(kΩ) |
-20 | 8.608 | 30 | 1.268 |
-15 | 6.909 | 35 | 1.077 |
-10 | 5.587 | 40 | 0.918 |
-5 | 4.549 | 45 | 0.786 |
0 | 3.729 | 50 | 0.674 |
5 | 3.075 | 55 | 0.581 |
10 | 2.55 | 60 | 0.502 |
15 | 2.126 | 65 | 0.435 |
20 | 1.782 | 70 | 0.378 |
25 | 1.5 |
The corresponding relationship between thermistor resistance and temperature is as follows:
T1:The temperature of testing target,unit:℃ .
T2:Reference point temperature,unit:℃,the typical reference temperature value within -20~70℃ is 10 or 40℃,and the reference temperature value close to the target temperature should be selected.
R1:Thermistor resistance corresponding to T1,unit:kΩ .
R2:Thermistor resistance corresponding to T2,unit:kΩ .
B:Thermal sensitivity coefficient,within -20~70℃,the typical value of B10/40 is 3019.6±60.
Precaution:
1.During TEC installation,attention should be paid to the additional resistance introduced by the external electrical structure.If the additional resistance exceeds 10%of the TEC resistance, the I-V curve needs to be recalibrated.
2.It is recommended to connect the TEC with a smaller connection resistance.If welding is required,short-circuit grounding protection is required.The welding temperature should be ≤250℃ and the welding time should be <10s.
3. The relationship between temperature and resistance in each node interval of the temperature monitoring module can be approximately proportional to a first-order linear function, and the resistance corresponding to the preset temperature can be estimated according to demand.
4. Before turning on the TEC, the temperature monitoring module must be confirmed working properly, the heat dissipation surface is in full contact with the radiator, the heat dissipation surface is not less than the required size area, and the radiator is working properly. Do not turn on the TEC without installing the radiator or when the radiator is not working.
5. When the TEC is turned on for the first time, the current or voltage should be gradually loaded from 0A or 0V while monitoring the temperature change until the preset temperature is reached.
6. Since the performance of the detector is affected by temperature, the TEC should be turned on first until the temperature is stable and then the detector is turned on. It is not recommended to operate the detector in temperature change environment.
7. When the detector is not working, the power supply to TEC should be turn off to extend the service life of TEC.
8. The cooling and heating effects of the detector are related to the ambient temperature, power performance, and heat dissipation status. It is recommended to reasonably match the heat dissipation system according to the ambient environment and the performance requirements of the detector.
7. Product Solutions
Issue | Possible causes | Solutions |
The detector VOUT signal output is abnormal | No power supply or abnormal power supply | Check whether each power supply meets the electrical requirements in the manual. |
Timing anomalies | Modulate the detector timing pulse width according to the recommendations in the user manual. | |
The detector output signal is too noisy |
Large power supply ripple noise | The DC power supply ripple noise must be supplied according to the electrical requirements in the user manual. |
High ambient temperature | Operate under appropriate circumstances | |
Thermoelectric cooler pins are reversed | Check if there is reverse connection by detecting temperature monitoring module |
8. Customer Support
For general technical information and further business inquiries, please contact us.
Our address: Bldg. 20-3, Zhongnan High-Tech Innovation Center, No. 20 Chuanggu Road, Dongxihu Dist., Wuhan 430040, China
Please call:+86 027-83389893
E-mail: info@BeLeadSensor.com
Please Visit: www.BeLeadSensor.com
For further support on this product, you are welcomed to communicate with our application engineers.
9. Statement
This user manual is copyrighted by Belead Sensor Technology (Wuhan) Co., Ltd. (hereinafter referred to as "Belead Sensor").Belead Sensors reserves all rights. No organization or individual may extract, copy, translate, or modify all or part of the contents of this manual in any way without written permission.
Users must comply with all requirements in this manual when using this product. If, after inspection, Belead Sensor finds that the product is damaged, defective or cannot be used due to user abuse, incorrect operation, misuse, modification, negligence, improper installation, etc., which
does not comply with the information and precautions described in the manual, then such product is not eligible for the warranty service provided by Belead Sensor.
In addition, the warranty does not apply to:
1. Any products or components not manufactured by Belead Sensor;
2. Stipulated in the contract and technical agreement that have been reviewed and signed in writing by Belead Sensor.